PART |
Description |
Maker |
P6LU-XXXXZH52 P6LU-0505ZH52 P6LU-053R3ZH52 P6LU-12 |
Input voltage:12V, output voltage /-15V ( /-34mA), 5.2KV isolated 1W unregulated dual output Input voltage:24V, output voltage /-7.2V ( /-69mA), 5.2KV isolated 1W unregulated dual output 5.2 KV ISOLATED 1W UNREGULATED DUAL OUTPUT SIP7 5.2千伏隔震1W的未稳压双输出SIP7 Input voltage:12V, output voltage /-5V ( /-100mA), 5.2KV isolated 1W unregulated dual output
|
PEAK[PEAK electronics GmbH]
|
FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C) TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展|四楼一(c
|
Infineon Technologies AG
|
FG1600BX24 FG2000DX24 FG2000DX32 |
THYRISTOR|GTO|1.2KV V(DRM)|TO-200VAR75 晶闸管| GTO的| 1.2KV五(DRM)的|00VAR75 THYRISTOR|GTO|1.2KV V(DRM)|TO-200AE 晶闸管| GTO的| 1.2KV五(DRM)的|00AE
|
Dynex Semiconductor, Ltd. Fairchild Semiconductor, Corp.
|
DF100R12KF-A FD150R12KF-K |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 100A I(C) | M:HL093HW048 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 100A一(c)|米:HL093HW048 TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 150A I(C) | M:HL093HW048 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 150A一(c)|米:HL093HW048
|
Atmel, Corp. Air Cost Control
|
CAS300M12BM2 |
1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module
|
Cree, Inc
|
BSM300GB120DLC |
TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2KV V(BR)CES,625A I(C)
|
Eupec
|
P8SG-247R2ZH52 P8SG-0505ZH52 P8SG-053R6ZH52 P8SG-1 |
Input voltage:5V, output voltage /-5V ( /-150mA), 5.2KV isolated 1.5W regulated dual output 5.2 KV ISOLATED 1.5 W REGULATED DUAL OUTPUT DIP24 5.2千伏隔震1.5糯稳压双输出DIP24 Input voltage:5V, output voltage /-3.6V ( /-200mA), 5.2KV isolated 1.5W regulated dual output
|
PEAK[PEAK electronics GmbH]
|
HGT1S1N120CNDS9A |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-263AB 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 6.2AI(丙)|63AB
|
Intersil, Corp.
|
IXGA15N120C |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 30A I(C) | TO-263AA 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 30A条一(c)|63AA
|
IXYS, Corp.
|
IXGP15N120B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 30A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 30A条一(c)| TO - 220AB现有
|
Maxim Integrated Products
|
2MBI100J120 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 100号A一c
|
Samsung Semiconductor Co., Ltd.
|